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PublicouLuca Peres Alterado mais de 10 anos atrás
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The Coherent FinFET Prof. Carlo Requião da Cunha, Ph.D.
Laboratório de Circuitos Integrados UFSC Núcleo Interdisciplinar de Microeletrônica Chip in Rio Sep / 07
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Ballistic Transport L < Lm (Momentum Relaxation Length) = .Lc L Lm
= ? Diffusive Transport Ballistic Transport
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Coherent Transport L < L (Phase Relaxation Length) = .Lc L L
Phase randomizing agents: e- - e-, e- - ph
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A Model Device: Fin Structure
J
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Simulation Strategy Poisson Schrödinger structure potential current
density Poisson Schrödinger
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Green’s Functions JUST MATH
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Huge Discussion!
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ID VDS Characteristic
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Gating Action ~73 A/V
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Negative Gate Bias
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Quantization
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Conclusions The coherent FinFET still retains some of the main properties of the classical MOS depletion transistor; Intrinsic quantum behavior makes the drain current marginally sensitive to gate action; Output resistance is highly reduced; The transistor shows a quantum transition for negative gate voltages that might lead to the design of new devices.
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