The Coherent FinFET Prof. Carlo Requião da Cunha, Ph.D. Laboratório de Circuitos Integrados UFSC Núcleo Interdisciplinar de Microeletrônica Chip in Rio Sep / 07
Ballistic Transport L < Lm (Momentum Relaxation Length) = .Lc L Lm = ? Diffusive Transport Ballistic Transport
Coherent Transport L < L (Phase Relaxation Length) = .Lc L L Phase randomizing agents: e- - e-, e- - ph
A Model Device: Fin Structure J
Simulation Strategy Poisson Schrödinger structure potential current density Poisson Schrödinger
Green’s Functions JUST MATH
Huge Discussion!
ID VDS Characteristic
Gating Action ~73 A/V
Negative Gate Bias
Quantization
Conclusions The coherent FinFET still retains some of the main properties of the classical MOS depletion transistor; Intrinsic quantum behavior makes the drain current marginally sensitive to gate action; Output resistance is highly reduced; The transistor shows a quantum transition for negative gate voltages that might lead to the design of new devices.